AO4566
30V N-Channel MOSFET
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low R
DS(ON)
at 4.5V V
GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
30V
12A
< 11mΩ
< 17mΩ
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
SOIC-8
Top View
D
D
D
D
Bottom View
100% UIS Tested
100% R
g
Tested
D
G
S
S
S
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Avalanche Current
V
DS
Spike
Power Dissipation
B
C
C
C
Maximum
30
±20
12
9.4
48
15
11
36
2.5
1.6
-55 to 150
Units
V
V
A
A
mJ
V
W
°
C
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
AS
E
AS
V
SPIKE
P
D
T
J
, T
STG
100ns
T
A
=25°
C
T
A
=70°
C
Avalanche energy L=0.1mH
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
42
70
20
Max
50
85
30
Units
°
C/W
°
C/W
°
C/W
Rev 0: Aug 2012
www.aosmd.com
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AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
