AO4494L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=18A
Capacitance (pF)
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
15
20
25
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
5
10
30
0
0
C
rss
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
C
oss
C
iss
8
V
GS
(Volts)
6
4
2
90.00
I
D
(A), Peak Avalanche Current
80.00
70.00
60.00
50.00
40.00
30.00
20.00
0.000001
T
A
=150°C
T
A
=125°C
T
A
=25°C
10µs
T
A
=100°C
1000.0
100.0
R
DS(ON)
limited
10µs
100µs
1ms
T
J(Max)
=150°C
T
A
=25°C
0.1
1
10
I
D
(Amps)
10.0
1.0
0.1
0.0
10ms
100ms
10s
DC
100
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
(Note C)
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1000
T
A
=25°C
Power (W)
100
10
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
