AO4490
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4490/L uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 4.5V, while retaining a 20V V
GS(MAX)
rating. It is ESD protected. This device is suitable for use as
a load switch and general purpose applications.
AO4490
and AO4490L are electrically identical.
-RoHS Compliant
-AO4490L is Halogen Free
Features
V
DS
(V) = 30V
(V
GS
= 10V)
I
D
= 16A
R
DS(ON)
< 7.2mΩ (V
GS
= 10V)
R
DS(ON)
< 10mΩ (V
GS
= 4.5V)
ESD protected
UIS Tested!
Rg, Ciss,Coss,Crss Tested
S
S
S
G
D
D
D
D
D
G
S
SOIC-8
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
AF
Pulsed Drain Current
Avalanche Current
G
G
B
Maximum
30
±20
16
13
120
30
135
2.8
1.8
-55 to 150
Units
V
V
A
A
mJ
W
°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
T
A
=25°C
Repetitive avalanche energy L=0.3mH
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
32
62
18
Max
45
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
