AO4490
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=30V, V
GS
=0V
C
T
J
=55°
V
DS
=0V, V
GS
= ±16V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=16A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=12A
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=16A
I
S
=1A,V
GS
=0V
C
T
J
=125°
1.4
120
6
8.5
8
55
0.70
1.0
4
1803
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
387
238
1.3
36
V
GS
=10V, V
DS
=15V, I
D
=16A
19
3.9
8.7
7.6
V
GS
=10V, V
DS
=15V, R
L
=1Ω,
R
GEN
=3Ω
I
F
=16A, dI/dt=100A/µs
6.4
27
8.5
27
17
33
2
48
2170
7.2
10
10
1.8
Min
30
Typ
37
1
5
10
2.5
Max
Units
V
µA
µA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
C
iss
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=16A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25° The value in any given application depends on the user's specific board design.
C.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
C.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25° The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles such that Tj(start)=25C for each pulse.
Rev4: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
