AO4488
30V N-Channel MOSFET
General Description
The AO4488 uses advanced trench technology to
provide excellent R
DS(ON)
with low gate charge.
This device is ESD protected and it is suitable for
use as a load switch or in PWM applications.
Product Summary
V
DS
(V) = 30V
(V
GS
= 10V)
I
D
= 20A
R
DS(ON)
< 4.6m (V
GS
= 10V)
R
DS(ON)
< 6.4m (V
GS
= 4.5V)
ESD Protected
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
Bottom View
D
G
S
Pin1
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
10 Sec
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Avalanche Current
G
G
B
Steady State
30
±20
15
12
80
50
375
Units
V
V
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
3.1
2.0
20
17
A
Repetitive avalanche energy L=0.3mH
T
A
=25°
C
A
Power Dissipation
T
A
=70°
C
mJ
1.7
1.1
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
-55 to 150
Symbol
t
≤
10s
Steady State
Steady State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
