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AO4485 参数 Datasheet PDF下载

AO4485图片预览
型号: AO4485
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型场效应晶体管 [P-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 4 页 / 206 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
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AO4485
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
-V
GS
(Volts)
6
4
2
0
0
5
10
15
20
25
30
35
40
45
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
4000
V
DS
= 15V
I
D
= -10A
Capacitance (pF)
3500
3000
2500
2000
1500
1000
500
0
0
10
20
30
40
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
rss
C
oss
C
iss
1000
100
10µs
10
1
0.1
0.01
0.1
1
100µs
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
10
1ms
10ms
100ms
10s
DC
1000
T
J(Max)
=150°C
T
A
=25°C
Power (W)
100
-I
D
(Amps)
10
I
F
=-6.5A, dI/dt=100A/µs
100
-V
DS
(Volts)
1
0.0001
0.01
1
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
P
D
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
0.01
T
on
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com