AO4484
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
10V
100
80
I
D
(A)
60
40
20
V
GS
= 3V
0
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Region Characteristics
16
Normalized On-Resistance
14
R
DS(ON)
(m
Ω
)
12
10
8
6
4
0
5
10
V
GS
= 10V
1.8
1.6
1.4
1.2
1.0
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+02
I
D
= 10A
20
R
DS(ON)
(m
Ω
)
I
S
(A)
1E+01
1E+00
125°C
1E-01
V
GS
= 10V
I
D
= 10A
V
GS
= 4.5V
I
D
=8A
0
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
4V
4.5V
80
100
V
DS
= 5V
60
40
3.5V
20
125°C
25°C
V
GS
= 4.5V
I
F
=-6.5A, dI/dt=100A/µs
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
125°C
1E-02
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
1E-03
10
25°C
25°C
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
1E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
5
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
15
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
