TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=50V
I
D
=6A
Capacitance (pF)
3000
8
2400
C
iss
1800
V
GS
(Volts)
6
4
1200
C
oss
600
C
rss
2
0
0
5
20
25
30
35
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
10
15
40
0
0
40
60
80
V
DS
(Volts)
Figure 8: Capacitance Characteristics
20
100
100
I
AR
(A) Peak Avalanche Current
T
A
=25°
C
T
A
=100°
C
100.0
10µs
10.0
I
D
(Amps)
R
DS(ON)
limited
100µs
10
T
A
=150°
C
T
A
=125°
C
1.0
1ms
DC
0.1
10ms
10s
T
J(Max)
=150°C
T
A
=25°C
1
1
10
100
1000
Time in avalanche, t
A
(µs)
µ
Figure 9: Single Pulse Avalanche capability (Note
C)
0.0
0.01
1
10
100
V
DS
(Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
0.1
1000
10000
T
A
=25°
C
1000
Power (W)
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 3 : Dec 2010
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AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
