AO4480
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
4
8
12
16
20
24
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
100.0
100µs
10.0
I
D
(Amps)
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
10ms
1ms
Power (W)
10µs
80
60
40
20
0
0.001
V
DS
=20V
I
D
=14A
Capacitance (pF)
2400
2000
1600
1200
800
400
0
0
5
20
25
30
35
V
DS
(Volts)
Figure 8: Capacitance Characteristics
10
15
40
C
oss
C
rss
C
iss
100
500
150
60
T
J(Max)
=150°C
Tc=25°C
100ms
10s
1s
DC
1.0
0.1
0.0
0.01
1
10
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.1
100
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=75°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
Single Pulse
0.0001
0.001
0.01
0.1
1
T
on
10
0.01
0.00001
T
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
