AO4478L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
2
4
6
8
10
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=15V
I
D
=9A
800
Capacitance (pF)
600
C
iss
400
200
C
rss
0
C
oss
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
70
I
D
(A), Peak Avalanche Current
60
50
40
30
20
10
0
0.000001
T
A
=25°C
T
A
=25°C
I
D
(Amps)
1000
100
10
1
0.1
0.01
0.1
1
V
DS
(Volts)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
10
100
T
J(Max)
=150°C
T
A
=25°C
R
DS(ON)
limited
10µs
100µs
1ms
10ms
100ms
10s
DC
T
A
=150°C
T
A
=150°C
T
A
=100°C
T
A
=125°C
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 9: Single Pulse Avalanche capability
(Note C)
1000
T
J(Max)
=150°C
T
A
=25°C
Power (W)
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
