AO4472
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
70
60
50
I
D
(A)
40
30
20
10
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
8.0
7.0
V
GS
=4.5V
R
DS(ON)
(m
Ω
)
6.0
5.0
4.0
3.0
0
20
40
60
80
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
15
I
D
=19A
12
R
DS(ON)
(m
Ω
)
9
6
3
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
1.0E+02
1.0E+01
1.0E+00
125°C
I
S
(A)
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
125°C
Normalized On-Resistance
1.6
I
D
=19A
1.4
V
GS
=10V
1.2
V
GS
=4.5V
V
GS
=2.5V
10
0
1
1.5
2
2.5
3
3.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
3.0V
10V
3.5V
4.5V
60
50
40
125°C
30
20
25°C
V
DS
=5V
V
GS
=10V
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
25°C
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
