AO4468
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4468/L uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance.
AO4468 and AO4468L are electrically identical.
-RoHS Compliant
-AO4468L is Halogen Free
Features
V
DS
(V) = 30V
I
D
= 11.6A
R
DS(ON)
< 14mΩ
R
DS(ON)
< 22mΩ
(V
GS
= 10V)
(V
GS
= 10V)
(V
GS
= 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
D
S
S
S
G
D
D
D
D
SOIC-8
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
AF
Pulsed Drain Current
Avalanche Current
B
Repetitive avalanche energy L=0.3mH
T
A
=25°C
Power Dissipation
T
A
=70°C
B
B
Maximum
30
±20
11.6
9.2
50
16
38
3.1
2
-55 to 150
Units
V
V
A
A
mJ
W
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
A
C
Steady-State
Maximum Junction-to-Lead
Symbol
R
θJA
R
θJL
Typ
31
59
16
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
