AO4466
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
10V
50
40
I
D
(A)
4.5V
30
20
V
GS
=3.5V
10
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
40
Normalized On-Resistance
35
R
DS(ON)
(m
Ω
)
30
25
20
15
10
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
60
I
D
=9.4A
50
R
DS(ON)
(m
Ω
)
40
1.0E+01
1.0E+00
1.0E-01
I
S
(A)
125°C
1.0E-02
1.6
V
GS
=10V
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
V
GS
=4.5V
V
GS
=4.5V
I
D
(A)
12
8
125°C
4
0
1.5
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
25°C
6V
20
16
V
DS
=5V
V
GS
=10V
125°C
25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
30
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
20
1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
25°C
10
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
