AO4466
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
2
4
6
8
10
12
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1000
800
Capacitance (pF)
C
iss
600
400
200
0
0
C
rss
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
V
DS
=15V
I
D
=9.4A
C
oss
100.0
R
DS(ON)
limited
10.0
I
D
(Amps)
100µs
1ms
10ms
0.1s
1.0
T
J(Max)
=150°C
T
A
=25°C
0.1
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
1s
10s
DC
10µs
Power (W)
50
40
30
20
10
0
0.0001
T
J(Max)
=150°C
T
A
=25°C
1
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
0.01
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOSP
D
DOES NOT ASSUME ANY LIABILITY ARISING
0.1
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
T
on
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
