AO4462
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
35
30
25
I
D
(A)
20
15
10
5
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
1.6
28
Normalized On-Resistance
25
R
DS(ON)
(m
Ω
)
22
19
16
13
10
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
45
40
R
DS(ON)
(m
Ω
)
35
30
I
D
=11A
I
S
(A)
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
V
GS
=10V
V
GS
=4.5V
1.4
0
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
V
GS
=3V
I
D
(A)
3.5V
10V
4.5V
4V
16
12
125°C
8
25°C
4
V
DS
=5V
20
800
140
80
0.5
15
7
V
GS
=10V
I
D
=11A
220
140
V
GS
=4.5V
1.2
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
125°C
25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
25
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF20
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
25°C
1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
15
10
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
