AO4459
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-15V
I
D
=-6.5A
1200
1000
C
iss
Capacitance (pF)
800
600
400
C
oss
200
C
rss
0
0
3
6
9
12
15
0
5
10
15
20
25
30
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
8
-V
GS
(Volts)
6
4
2
0
100
40
T
J(Max)
=150°C
T
A
=25°C
Power (W)
-I
D
(Amps)
10
R
DS(ON)
limited
100µs
30
1ms
1
T
J(Max)
=150°C
T
A
=25°C
0.1
0.1
1
10ms
100ms
DC
1s
10s
20
10
I
F
=-6.5A, dI/dt=100A/µs
10
100
-V
DS
(Volts)
0
0.001
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
P
D
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
0.01
T
on
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
