TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-15V
I
D
=-6.5A
8
600
Capacitance (pF)
-V
GS
(Volts)
6
500
400
300
C
oss
200
2
100
0
0
4
6
8
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
10
0
0
C
rss
10
15
20
25
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
30
C
iss
800
700
4
100.0
-I
AR
(A) Peak Avalanche Current
T
A
=25°C
T
A
=100°C
T
A
=150°
100.0
10.0
-I
D
(Amps)
T
A
=125°C
10.0
R
DS(ON)
limited
10µs
100µs
1.0
1ms
10ms
0.1
T
J(Max)
=150°C
T
A
=25°C
10s
DC
100
1.0
10
100
1000
Time in avalanche, t
A
(µs)
µ
Figure 9: Single Pulse Avalanche capability (Note C)
1
0.0
0.01
1
10
-V
DS
(Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
0.1
10000
T
A
=25°C
1000
Power (W)
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 2: Nov 2011
www.aosmd.com
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AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
