AO4458
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4458/L uses advanced trench technology to
provide excellent R
DS(ON)
with low gate charge. This
device is ESD protected and it is suitable for use as
a load switch or in PWM applications.
AO4458 and
AO4458L are electrically identical.
-RoHs Compliant
-AO4458L is Halogen Free
Features
V
DS
(V) = 30V
(V
GS
= 10V)
I
D
= 20A
R
DS(ON)
< 4.6mΩ (V
GS
= 10V)
R
DS(ON)
< 6.4mΩ (V
GS
= 4.5V)
D
S
S
S
G
D
D
D
D
S
G
SOIC-8
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
V
DS
Drain-Source Voltage
30
V
GS
±20
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Avalanche Current
G
Repetitive avalanche energy L=0.3mH
Power Dissipation
A
G
B
Units
V
V
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
T
A
=25°C
T
A
=70°C
20
17
80
50
375
3.1
2.0
-55 to 150
15
12
A
mJ
1.7
1.1
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady State
Steady State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
