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AO4452 参数 Datasheet PDF下载

AO4452图片预览
型号: AO4452
PDF下载: 下载PDF文件 查看货源
内容描述: 100V N沟道MOSFET [100V N-Channel MOSFET]
分类和应用:
文件页数/大小: 6 页 / 439 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
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AO4452
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
Single Pulse
T
on
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
T
0.01
300
di/dt=800A/µs
250
I
rm
Q
rr
(nC)
200
150
100
Q
rr
50
0
5
10
15
20
25
30
25ºC
125ºC
15
12
9
125ºC
6
3
0
I
S
(A)
Figure 13: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
24
di/dt=800A/µs
20
16
t
rr
(ns)
I
rm
(A)
t
rr
125ºC
2
1.6
25ºC
1.2
0.8
25ºC
8
125ºC
4
0
0
5
10
15
S
25ºC
20
25
30
0.4
0
I
S
(A)
Figure 14: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
30
t
rr
25
125ºC
I
s
=20A
2
S
25ºC
S
0
0
200
400
600
800
1000
di/dt (A/µs)
µ
Figure 16: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
125ºC
1
3
150
I
s
=20A
120
90
125ºC
60
30
I
rm
0
0
200
400
600
800
Q
rr
25ºC
125ºC
25ºC
Q
rr
(nC)
30
26
22
18
I
rm
(A)
14
10
6
2
-2
1000
di/dt (A/µs)
µ
Figure 15: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
40
20
t
rr
(ns)
15
10
5
0
25ºC
Rev 3: May 2012
www.aosmd.com
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