AO4442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=37.5V
I
D
=3.1A
Capacitance (pF)
400
350
300
250
200
150
100
50
0
0
3
4
5
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1
2
6
0
0
30
40
50
V
DS
(Volts)
Figure 8: Capacitance Characteristics
10
20
60
C
rss
C
oss
C
iss
8
V
GS
(Volts)
6
4
2
100.0
40
T
J(Max)
=150°C, T
A
=25°C
10µs
100µs
1ms
10ms
1s
0.1s
10s
DC
30
Power (W)
T
J(Max)
=150°C
T
A
=25°C
10.0
I
D
(Amps)
R
DS(ON)
limited
1.0
20
0.1
10
0.0
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
10
100
0
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note E)
D=T
on
/T
T
J,PK
=T
J
+P
DM
.Z
θJA
.R
θJA
R
θJA
=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
Single Pulse
0.0001
0.001
0.01
0.1
1
T
on
0.01
0.00001
T
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
