AO4446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
I
D
(A)
15
10
V
GS
=3.5V
5
0
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Regions Characteristi
cs
10
0
1.5
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
2
Normalized On-Resistance
V
GS
=4.5V
1.8
1.6
1.4
1.2
1
0.8
0
5
10
15
20
25
30
0
25
50
75
100
125
150
175
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
V
GS
=4.5V
I
D
=11A
V
GS
=10V
I
D
=15A
I
D
(A)
10V
5V
4.5V
V
GS
=4V
40
125°C
30
20
25°C
60
50
V
DS
=5V
16
14
R
DS(ON)
(m
Ω
)
12
10
8
6
V
GS
=10V
20
I
D
=15A
1.0E+02
1.0E+01
125°C
16
R
DS(ON)
(m
Ω
)
125°C
I
S
(A)
1.0E+00
1.0E-01
25°C
1.0E-02
1.0E-03
12
8
25°C
4
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
