AO4443
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
30
25
20
-I
D
(A)
15
10
V
GS
=-3.0V
5
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
60
Normalized On-Resistance
55
50
R
DS(ON)
(m
Ω
)
45
40
35
30
25
20
0
2
4
6
8
10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
140
I
D
=-6A
120
100
80
60
40
20
2
4
6
8
10
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
-I
S
(A)
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
125°C
V
GS
=-10V
V
GS
=-4.5V
1.8
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
V
GS
=-10V
I
D
=-6A
V
GS
=-4.5V
I
D
=-5A
5
0
1
1.5
2
2.5
3
3.5
4
4.5
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-6.0V
-4.0V
-10V
-5.0V
25
-4.5V
20
15
10
V
DS
=-5V
-3.5V
-I
D
(A)
125°C
25°C
1.0E+01
R
DS(ON)
(m
Ω
)
125°C
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
