AO4442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=37.5V
I
D
=3.1A
8
Capacitance (pF)
400
C
iss
300
500
V
GS
(Volts)
6
4
200
C
oss
2
100
C
rss
0
0
0
3
4
5
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1
2
6
0
30
40
50
V
DS
(Volts)
Figure 8: Capacitance Characteristics
10
20
60
100.0
10000
T
A
=25°
C
10.0
10µs
1000
Power (W)
1000
I
D
(Amps)
100µs
1.0
R
DS(ON)
limited
1ms
10ms
10s
DC
100
0.1
T
J(Max)
=150°C
T
A
=25°C
10
0.0
0.01
0.1
1
10
V
DS
(Volts)
100
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=75°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
Single Pulse
T
on
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
T
0.01
Rev 2: June 2011
www.aosmd.com
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AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
