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AO4440L 参数 Datasheet PDF下载

AO4440L图片预览
型号: AO4440L
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 113 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
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AO4440
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4440 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Standard Product AO4440 is Pb-free
(meets ROHS & Sony 259 specifications). AO4440L
is a Green Product ordering option. AO4440 and
AO4440L are electrically identical
Features
V
DS
(V) = 60V
I
D
= 5A (V
GS
= 10V)
R
DS(ON)
< 55mΩ (V
GS
= 10V)
R
DS(ON)
< 75mΩ (V
GS
= 4.5V)
D
S
S
S
G
D
D
D
D
G
S
SOIC-8
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
B
Maximum
60
±20
5
4
20
2.5
1.6
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
38
69
24
Max
50
80
30
Units
°C/W
°C/W
°C/W