AO4438
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10
8
V
GS
(Volts)
6
4
2
500
0
0
10
20
30
40
50
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
3500
V
DS
=30V
I
D
=8.2A
Capacitance (pF)
3000
2500
2000
1500
1000
C
oss
C
rss
C
iss
100.0
R
DS(ON)
limited
10.0
I
D
(Amps)
1s
0.1s
1.0
T
J(Max)
=150°C
T
A
=25°C
0.1
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
10s
DC
10µs
Power (W)
40
100µs
1ms
10ms
T
J(Max)
=150°C
T
A
=25°C
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
10
100
1000
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
