AO4433
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4433 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. The
device is ESD protected.
Standard product AO4433
is Pb-free (meets ROHS & Sony 259 specifications).
AO4433L is a Green Product ordering option.
AO4433 and AO4433L are electrically identical.
Features
V
DS
(V) = -30V
I
D
= -11 A
(V
GS
= -20V)
R
DS(ON)
< 14mΩ (V
GS
= -20V)
R
DS(ON)
< 18mΩ (V
GS
= -10V)
ESD Rating: 1.5KV HBM
SOIC-8
Top View
S
S
S
G
D
D
D
D
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
-30
±25
-11
-9.7
-50
3
2.1
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
28
54
21
Max
40
75
30
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
