AO4427
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
-10V
-6V
-5V
20
25
V
DS
=-5V
20
-I
D
(A)
-I
D
(A)
-4.5V
15
125°C
10
10
V
GS
=-4V
5
25°C
0
0
2
3
4
-V
DS
(Volts)
Fig 1: On-Region Characteristics
1
5
0
1
1.5
2.5
3
3.5
4
4.5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
2
5
12
1.6
Normalized On-Resistance
11
R
DS(ON)
(m
Ω
)
V
GS
=-10V
1.4
V
GS
=-10V
I
D
=-10A
V
GS
=-10V, V
DS
=-15V,
10
I
D
=-12.5A
V
GS
=-20V
I
D
=-12.5A
1
1.2
9
V
GS
=-20V
8
0
5
10
15
20
25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
I
D
=-12.5A
40
R
DS(ON)
(m
Ω
)
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
1.0E+00
1.0E-01
125°C
30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
1.0E-02
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
125°C
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
1.0E-03
20
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
1.0E-04
25°C
10
25°C
1.0E-05
0
4
5
6
7
8
9
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
-I
S
(A)
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
