AO4422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
I
D
(A)
15
10
5
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
24
V
GS
=4.5V
Normalized On-Resistance
22
20
R
DS(ON)
(m
Ω
)
18
16
14
12
10
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
60
50
I
D
=10A
R
DS(ON)
(m
Ω
)
I
S
(A)
40
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
V
GS
=10V
1.6
4V
10V
4.5V
3.5V
12
I
D
(A)
125°C
8
V
GS
=3V
4
0
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
25°C
20
16
V
DS
=5V
800
140
80
0.5
15
7
V
GS
=10V
I
D
=10A
220
140
1.4
V
GS
=4.5V
1.2
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
30
1.0E-03
125°C
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
20
1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
25°C
10
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
