AO4422A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
4.5V
25
20
I
D
(A)
15
10
5
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
22
Normalized On-Resistance
20
R
DS(ON)
(m
Ω
)
18
16
14
12
10
0
5
10
15
20
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
V
GS
=10V
V
GS
=4.5V
1.8
3.5V
5V
7V
10V
4V
32
28
24
I
D
(A)
20
16
12
8
V
GS
=3V
4
0
1.5
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
25°C
125°C
V
DS
=5V
800
140
80
0.5
15
7
220
140
V
GS
=10V
I
D
=11A
1.6
1.4
1.2
V
GS
=4.5V
I
D
=9A
1
50
I
D
=11A
40
R
DS(ON)
(m
Ω
)
1.0E+01
1.0E+00
1.0E-01
I
S
(A)
125°C
1.0E-02
125°C
25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF 20
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
25°C
1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
10
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
30
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
