AO4412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
I
D
(A)
15
10
5
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
60
50
R
DS(ON)
(m
Ω
)
40
30
20
V
GS
=10V
10
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
90
80
70
R
DS(ON)
(m
Ω
)
60
50
40
30
20
10
0
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
2
25°C
125°C
I
S
(A)
I
D
=5A
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
Normalized On-Resistance
1.8
1.6
V
GS
=4.5V
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
V
GS
=10V
V
GS
=2.5V
10V
20
3V
4.5V
2.5V
12
I
D
(A)
8
2V
4
V
GS
=1.5V
0
0
0.5
1
1.5
2
2.5
3
V
GS
(Volts)
Figure 2: Transfer Characteristics
125°C
25°C
16
V
DS
=5V
V
GS
=2.5V
V
GS
=4.5V
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
