TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-15V
I
D
=-9.7A
8
Capacitance (pF)
-V
GS
(Volts)
1600
1400
1200
1000
800
600
C
oss
400
2
200
0
0
10
15
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
T
A=25°
C
T
A=100°
C
T
A=150°
C
C
iss
6
4
0
5
20
0
C
rss
15
20
25
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
100
-I
AR
(A) Peak Avalanche Current
100.0
10.0
R
DS(ON)
limited
10µs
100µs
10
-I
D
(Amps)
T
A=125°
C
1.0
1ms
10ms
T
J(Max)
=150°C
T
A
=25°C
10s
DC
10
100
0.1
1
10
100
1000
Time in avalanche, t
A
(µs)
µ
Figure 9: Single Pulse Avalanche capability (Note
C)
1
0.0
0.01
0.1
1
-V
DS
(Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10000
T
A
=25°
C
1000
Power (W)
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 6: May 2011
www.aosmd.com
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AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
