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AO4418_07 参数 Datasheet PDF下载

AO4418_07图片预览
型号: AO4418_07
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 158 K
品牌: AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
 浏览型号AO4418_07的Datasheet PDF文件第1页浏览型号AO4418_07的Datasheet PDF文件第3页浏览型号AO4418_07的Datasheet PDF文件第4页浏览型号AO4418_07的Datasheet PDF文件第5页  
AO4418  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
STATIC PARAMETERS  
BVDSS  
Drain-Source Breakdown Voltage  
ID=250µA, VGS=0V  
30  
V
VDS=30V, VGS=0V  
1
5
IDSS  
Zero Gate Voltage Drain Current  
µA  
TJ=55°C  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
V
DS=0V, VGS= ±25V  
100  
3
nA  
V
VGS(th)  
ID(ON)  
VDS=VGS ID=250µA  
1.5  
40  
2.4  
VGS=10V, VDS=5V  
A
V
GS=20V, ID=11.5A  
9.8  
14.2  
12.3  
32  
14  
18  
17  
40  
mΩ  
TJ=125°C  
RDS(ON)  
Static Drain-Source On-Resistance  
mΩ  
mΩ  
VGS=10V, ID=10A  
VGS=4.5V, ID=5A  
VDS=5V, ID=10A  
IS=1A,VGS=0V  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
14  
22  
S
V
A
0.76  
1
Maximum Body-Diode Continuous Current  
4.3  
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
758  
180  
128  
0.7  
910  
pF  
pF  
pF  
V
GS=0V, VDS=15V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
180  
VGS=0V, VDS=0V, f=1MHz  
0.3  
1.1  
SWITCHING PARAMETERS  
Qg(10V)  
Total Gate Charge  
Total Gate Charge  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
16.6  
8.6  
20  
nC  
nC  
nC  
nC  
ns  
Qg(4.5V)  
Qgs  
Qgd  
tD(on)  
tr  
V
GS=10V, VDS=15V, ID=11.5A  
2.5  
4.9  
5.4  
5.1  
ns  
VGS=10V, VDS=15V, RL=1.3,  
GEN=3Ω  
R
tD(off)  
tf  
14.4  
3.7  
ns  
ns  
trr  
IF=11.5A, dI/dt=100A/µs  
IF=11.5A, dI/dt=100A/µs  
16.9  
6.6  
22  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
ns  
Qrr  
nC  
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The  
value in any given application depends on the user's specific board design.  
B: Repetitive rating, pulse width limited by junction temperature.  
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.  
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.  
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA  
curve provides a single pulse rating.  
F.The current rating is based on the t 10s thermal resistance rating.  
Rev 6: July 2007  
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com