AO4413
30V P-Channel MOSFET
General Description
The AO4413 uses advanced trench technology to provide
excellent R
DS(ON)
, and ultra-low low gate charge with a
25V gate rating. This device is suitable for use as a load
switch or in PWM applications.
Product Summary
V
DS
I
D
(at V
GS
=-20V)
R
DS(ON)
(at V
GS
=-20V)
R
DS(ON)
(at V
GS
= -10V)
-30V
-15A
< 7mΩ
< 8.5mΩ
100% UIS Tested
100% R
g
Tested
SOIC-8
Top View
D
D
D
D
G
G
S
S
S
Bottom View
D
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
-30
±25
-15
-12.8
-120
50
125
3.1
2
-55 to 150
Units
V
V
A
A
mJ
W
°
C
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
AS
, I
AR
E
AS
, E
AR
P
D
T
J
, T
STG
Avalanche energy L=0.1mH
C
T
A
=25°
Power Dissipation
B
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°
C/W
°
C/W
°
C/W
Rev 9: Jan 2010
www.aosmd.com
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AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
