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AO4409_11 参数 Datasheet PDF下载

AO4409_11图片预览
型号: AO4409_11
PDF下载: 下载PDF文件 查看货源
内容描述: 30V P沟道MOSFET [30V P-Channel MOSFET]
分类和应用:
文件页数/大小: 5 页 / 254 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
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AO4409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
-I
D
(A)
30
20
10
V
GS
=-3V
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
12
10
R
DS(ON)
(m
)
8
6
V
GS
=-10V
4
2
15
20
25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
5
10
Normalized On-Resistance
V
GS
=-4.5V
1.6
I
D
=-15A
1.4
V
GS
=-10V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
-4V
-4.5V
-6V
-10V
-I
D
(A)
-3.5V
40
30
20
10
125°
C
25°
C
60
V
DS
=-5V
50
1.2
1
17
5
2
10
V
GS
=-4.5V
0.8
0
25
50
75
100
125
150
175
Temperature (°
C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
20
I
D
=-15A
1.0E+02
1.0E+01
15
125°
C
R
DS(ON)
(m
)
-I
S
(A)
10
25°
C
5
1.0E+00
1.0E-01
1.0E-02
25°
C
1.0E-03
1.0E-04
125°
C
40
0
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 7: Feb. 2011
www.aosmd.com
Page 3 of 5