AO4408
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4408/L uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and fast
switching. This device makes an excellent high side
switch for notebook CPU core DC-DC conversion.
AO4408 and AO4408L are electrically identical.
-RoHS Compliant
-AO4408L is Halogen Free
Features
V
DS
(V) = 30V
(V
GS
= 10V)
I
D
= 12A
R
DS(ON)
< 13mΩ (V
GS
= 10V)
R
DS(ON)
< 16mΩ (V
GS
= 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
D
S
S
S
G
D
D
D
D
G
S
SOIC-8
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
AF
Current
Pulsed Drain Current
Avalanche Current
B
B
B
Maximum
30
±12
12
10
80
30
135
3
2.1
-55 to 150
Units
V
V
A
A
mJ
W
°C
V
GS
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
AV
E
AV
P
D
T
J
, T
STG
T
A
=25°C
Repetitive Avalanche Energy L=0.3mH
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
23
48
12
Max
40
65
16
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
