AO4407
30V P-Channel MOSFET
General Description
The AO4407 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is ideal for load switch
and battery protection applications.
Product Summary
V
DS
I
D
(at V
GS
=-20V)
R
DS(ON)
(at V
GS
=-20V)
R
DS(ON)
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
=-5V)
-30V
-12A
< 13mΩ
< 14mΩ
< 30mΩ
100% UIS Tested
100% R
g
Tested
SOIC-8
Top View
D
D
D
D
G
S
Bottom View
D
G
S
S
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
-30
±25
-12
-10
-60
26
101
3.1
2
-55 to 150
Units
V
V
A
A
mJ
W
°
C
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
AS
, I
AR
E
AS
, E
AR
P
D
T
J
, T
STG
Avalanche energy L=0.3mH
T
A
=25°
C
Power Dissipation
B
C
T
A
=70°
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°
C/W
°
C/W
°
C/W
Rev 13: July 2010
www.aosmd.com
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