AO4407A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
-10V
60
-6V
-5V
-I
D
(A)
60
80
V
DS
= -5V
-I
D
(A)
40
-4.5V
-4V
40
125°C
20
25°C
0
20
V
GS
= -3.5V
0
0
1
2
3
4
5
-V
DS
(Volts)
Figure 1: On-Region Characteristics
40
Normalized On-Resistance
V
GS
=-5V
30
R
DS(ON)
(m
Ω
)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
1.6
V
GS
=-20V
I
D
=-12A
1.4
V
GS
=-10V
I
D
=-12A
20
V
GS
=-10V
10
V
GS
=-20V
0
0
4
8
1.2
1.0
V
GS
=-5V
I
D
=-10A
I
F
=-6.5A,
16
dI/dt=100A/µs
12
20
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+01
1E+00
1E-01
125°C
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
30
25
R
DS(ON)
(m
Ω
)
20
I
D
=-12A
125°C
1E-03
15
25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
1E-04
25°C
OUT OF 10
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
1E-05
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
5
3
4
5
6
7
8
9
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
-I
S
(A)
1E-02
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
