AO4404B
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4404B uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be used
to bypass the source inductance.
Standard Product
AO4404B is Pb-free (meets ROHS & Sony 259
specifications).
Features
V
DS
(V) = 30V
I
D
= 8.5A (V
GS
= 10V)
R
DS(ON)
< 24mΩ (V
GS
= 10V)
R
DS(ON)
< 30mΩ (V
GS
= 4.5V)
R
DS(ON)
< 48mΩ (V
GS
= 2.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
D
S
S
S
G
D
D
D
D
SOIC-8
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
AF
Current
Pulsed Drain Current
Power Dissipation
Avalanche Current
B
B
Maximum
30
±12
8.5
7.1
60
2.8
1.8
15
34
-55 to 150
Units
V
V
A
V
GS
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
I
AR
E
AR
T
J
, T
STG
W
A
mJ
°C
Repetitive avalanche energy 0.3mH
B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
AF
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
37
70
26
Max
45
100
36
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
