December 2001
AO4403
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4403 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance.
Features
V
DS
(V) = -30V
I
D
= -6.1 A
R
DS(ON)
< 46mΩ (V
GS
= -10V)
R
DS(ON)
< 61mΩ (V
GS
= -4.5V)
R
DS(ON)
< 117mΩ (V
GS
= -2.5V)
SOIC-8
Top View
S
S
S
G
D
D
D
D
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
A
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
V
GS
Maximum
-30
±12
-6.1
-5.1
-60
3
2.1
-55 to 150
Units
V
V
A
W
°C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
