AO4240
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=20V
I
D
=20A
8
Capacitance (pF)
6000
5000
4000
3000
C
oss
2000
1000
0
0
30
40
50
60
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
10
20
70
0
20
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
10
40
C
iss
V
GS
(Volts)
6
4
2
C
rss
0
1000
I
AR
(A) Peak Avalanche Current
T
A
=100°C
1000.0
T
A
=25°C
100.0
10.0
1.0
0.1
0.0
1
10
100
1000
Time in avalanche, t
A
(µs)
µ
Figure 12: Single Pulse Avalanche capability
(Note C)
0.01
0.1
1
V
DS
(Volts)
10
100
100
R
DS(ON)
limited
10µs
100µs
1ms
10ms
10s
DC
T
A
=125°C
10
I
D
(Amps)
T
A
=150°C
T
J(Max)
=150°C
T
A
=25°C
1
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
10000
T
A
=25°C
1000
Power (W)
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 0: Feb. 2012
www.aosmd.com
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AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
