AO4202
30V N-Channel MOSFET
General Description
The AO4202 uses Trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Power losses are
minimized due to an extremely low combination of
R
DS(ON)
and C
rss
. In addition, switching behavior is well
controlled with a “Schottky style” soft recovery body
diode.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
30V
19A
< 5.3mΩ
< 7mΩ
100% UIS Tested
100% R
g
Tested
SOIC-8
D
Top View
D
D
D
D
G
S
Bottom View
G
S
S
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
30
±20
19
15
130
38
72
3.1
2
-55 to 150
Units
V
V
A
A
mJ
W
°
C
V
GS
T
A
=25°
C
C
T
A
=70°
I
D
I
DM
I
AS
, I
AR
E
AS
, E
AR
P
D
T
J
, T
STG
Avalanche energy L=0.1mH
T
A
=25°
C
Power Dissipation
B
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°
C/W
°
C/W
°
C/W
Rev 2 : Nov 2010
www.aosmd.com
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AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
