AO3705
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO3705/L uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge. A Schottky
diode is provided to facilitate the implementation of a
bidirectional blocking switch, or for buck convertor
applications.
AO3705 and AO3705L are electrically identical.
-RoHs Complaint
-AO3705L is Halogen Free
Features
V
DS
(V) = -20V
I
D
= -3.2A
(V
GS
= -4.5V)
R
DS(ON)
< 70mΩ (V
GS
= -4.5V)
R
DS(ON)
< 90mΩ (V
GS
= -2.5V)
R
DS(ON)
< 110mΩ (V
GS
= -1.8V)
R
DS(ON)
< 130mΩ (V
GS
= -1.5V)
SCHOTTKY
V
DS
(V) = 20V, I
F
= 1A, V
F
<0.45V@1A
D
K
SOT-23-5
Top View
G
S
A
1
2
3
5
4
D
K
G
S
A
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
T
A
=25°C
Continuous Drain Current
Pulsed Drain Current
B
A
MOSFET
-20
±8
-3.2
-2.5
-25
Schottky
Units
V
V
A
V
GS
T
A
=70°C
I
D
I
DM
V
KA
T
A
=25°C
A
Schottky reverse voltage
Continuous Forward Current
Pulsed Forward Current
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient
A
B
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
F
I
FM
P
D
T
J
, T
STG
Symbol
Typ
80.3
117
43
153
173
103
1.15
0.7
-55 to 150
20
1
0.5
10
0.66
0.42
V
A
W
°C
Max
110
150
80
190
220
140
Units
°C/W
t
≤
10s
Steady-State
Steady-State
t
≤
10s
Steady-State
Steady-State
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
R
θJA
R
θJL
R
θJA
R
θJL
°C/W
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
