AO3700
Electrical Characteristics (T=25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±12V
100
2
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1
1.4
VGS=4.5V, VDS=5V
10
A
VGS=10V, ID=3.3A
51
64
65
90
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
S
VGS=4.5V, ID=3.0A
60
75
V
GS=2.5V, ID=1A
DS=5V, ID=3.3A
100
11.7
0.81
160
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
IS=1A,VGS=0V
1
V
Maximum Body-Diode Continuous Current
2.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
226
39
270
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
29
V
GS=0V, VDS=0V, f=1MHz
GS=4.5V, VDS=15V, ID=3.3A
GS=10V, VDS=15V, RL=4.7Ω,
1.4
2.5
5.5
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
4.6
1.4
nC
nC
nC
ns
ns
ns
ns
V
V
Gate Source Charge
Gate Drain Charge
0.55
2.6
Turn-On DelayTime
Turn-On Rise Time
3.2
RGEN=6Ω
tD(off)
tf
Turn-Off DelayTime
14.5
2.1
Turn-Off Fall Time
trr
IF=3.3A, dI/dt=100A/µs
10.2
3.8
13
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
I =3.3A, dI/dt=100A/µs
F
nC
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=0.5A
0.39
0.5
0.1
20
V
VR=16V
Irm
Maximum reverse leakage current
mA
VR=16V, TJ=125°C
CT
trr
Junction Capacitance
VR=10V
34
5.2
0.8
pF
IF=1A, dI/dt=100A/µs
IF=1A, dI/dt=100A/µs
10
Schottky Reverse Recovery Time
Schottky Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating. Rev0: October 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
