AO3435
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
-4.5V
20
15
-2.0V
10
5
0
0
1
2
3
4
5
-V
DS
(Volts)
Figure 1: On-Region Characteristics
150
130
R
DS(ON)
(m
Ω
)
110
90
V
GS
=-2.5V
70
V
GS
=-4.5V
50
0
2
4
6
8
10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
180
160
140
R
DS(ON)
(m
Ω
)
-I
S
(A)
120
100
80
60
40
0
2
4
6
8
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
I
D
=-3.5A
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
1E+02
Normalized On-Resistance
V
GS
=-1.5V
1.6
V
GS
=-
2.5V
V
GS
=-4.5V
I
D
=-3.5A
V
GS
=-1.5V
I
D
=-0.5A
1
V
GS
=-1.5V
5
125°C
25°C
0
0
0.5
1
1.5
2
2.5
3
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-3.0V
-2.5V
15
-I
D
(A)
20
V
DS
=-5V
-I
D
(A)
10
1.4
V
GS
=-1.8V
1.2
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
12
125°C
25°C
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
