AO3421
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
-10V
15
-I
D
(A)
-8V
8
-6V
-5.5V
-5V
V
GS
=-4.5V
5
-4V
-3.5V
-3.0V
0
1
2
3
4
5
-I
D
(A)
6
125°C
4
2
0
1
2
3
4
5
6
-V
GS
(Volts)
Figure 2: Transfer Characteristics
1.6
Normalized On-Resistance
V
GS
=-10V
25°C
10
V
DS
=-5V
10
0
-V
DS
(Volts)
Fig 1: On-Region Characteristics
250
370
18
V
GS
=-4.5V
200
R
DS(ON)
(m
Ω
)
1.4
9
150
V
GS
=-4.5V
1.2
I
D
=-2A
100
V
GS
=-10V
50
0
1
2
3
4
5
6
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
300
250
I
D
=-2A
R
DS(ON)
(m
Ω
)
200
1
0.8
0
25
50
75
100
125
22
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
1.0E+00
1.0E-01
-I
S
(A)
1.0E-02
125°C
1.0E-03
1.0E-04
1.0E-05
1.0E-06
25°C
125°C
150
100
50
0
3
4
5
6
7
8
9
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
