AO3424
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3424/L uses advanced trench technology to
provide excellent R
DS(ON)
, very low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.
AO3424 and AO3424L are electrically
identical.
-RoHS Compliant
-AO3424L is Halogen Free
Features
V
DS
(V) = 30V
I
D
= 2 A
(V
GS
= 10V)
R
DS(ON)
< 80mΩ (V
GS
= 10V)
R
DS(ON)
< 95mΩ (V
GS
= 4.5V)
R
DS(ON)
< 157mΩ (V
GS
= 2.5V)
TO-236
(SOT-23)
Top View
G
D
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
30
±12
2
2
8
1.4
0.9
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
F
F
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
A
A
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
70
100
63
Max
90
125
80
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
