AO3423
20V P-Channel MOSFET
General Description
The AO3423 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as
a load switch applications.
Product Summary
V
DS
I
D
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
= -10V)
R
DS(ON)
(at V
GS
= -4.5V)
R
DS(ON)
(at V
GS
= -2.5V)
Typical ESD protection
-20V
-2A
< 92mΩ
< 118mΩ
< 166mΩ
HBM Class 2
SOT23
Top View
Bottom View
D
D
D
G
S
G
S
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
B
C
Maximum
-20
±12
-2
-2
-17
1.4
0.9
-55 to 150
Units
V
V
A
V
GS
C
T
A
=25°
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
65
85
43
Max
90
125
60
Units
°
C/W
°
C/W
°
C/W
Rev 5: Nov 2011
www.aosmd.com
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AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
