AO3415AL
P-Channel Enhancement Mode
Field Effect Transistor
General Description
The AO3415AL uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and operation
with gate voltages as low as 1.8V. This device is suitable
for use as a load switch applications.
Product Summary
Parameter
V
DS
I
D
(at V
GS
=-4.5V)
R
DS(ON)
(at V
GS
= -4.5V)
R
DS(ON)
(at V
GS
= -2.5V)
R
DS(ON)
(at V
GS
= -1.8V)
-20V
-4A
< 45mΩ
< 54mΩ
< 68mΩ
- RoHS Compliant
- Halogen Free
ESD Protected
SOT23
Top View
Bottom View
D
D
G
S
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
B
Maximum
-20
±8
-4
-3.5
-30
1.5
1
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
C
I
D
I
DM
P
D
T
J
, T
STG
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
W
°C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
65
85
43
Max
80
100
52
Units
°C/W
°C/W
°C/W
Rev 0: January 2009
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