AO3413
20V P-Channel MOSFET
General Description
The AO3413 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
Features
V
DS
= -20V
I
D
= -3A
R
DS(ON)
< 80mΩ
R
DS(ON)
< 100mΩ
R
DS(ON)
< 130mΩ
(V
GS
= -4.5V)
(V
GS
=- 4.5V)-15
(V
GS
= -2.5V)
(V
GS
= -1.8V)
SOT23
Top View
Bottom View
D
D
D
S
G
S
G
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
-20
±8
-3
-2.4
-15
1.4
0.9
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Steady-State
Maximum Junction-to-Lead
C
Symbol
R
θJA
R
θJL
Typ
70
100
63
Max
90
125
80
Units
°
C/W
°
C/W
°
C/W
Rev 9: July 2010
www.aosmd.com
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AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
