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AGD8256A 参数 Datasheet PDF下载

AGD8256A图片预览
型号: AGD8256A
PDF下载: 下载PDF文件 查看货源
内容描述: [BUF OR INV BA IGBT/MOSFET DRV,]
分类和应用: 驱动双极性晶体管接口集成电路
文件页数/大小: 14 页 / 912 K
品牌: AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
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AGD8156A / AGD8256A  
Function Timing Diagram  
A. Illustration of Shoot-Through (Cross-Conduction) Protection Logic  
HIN  
LIN  
HO  
a
b
c
a
LO  
a
a
b
Note:  
a. When one output (high or low side) is turned on, the other side turn-on input is ignored.  
b. If both outputs are changed simultaneously, the turn-on activation is done by the internal dead time of 275ns typ.  
(For more information, please refer to below Dead Timesection.)  
c. When high-side (HIN) and low-side (LIN) have turn-on inputs at the same time, low-side (LIN) has the priority.  
B. VCC (VBS) Supply Under-Voltage (UV) Lockout Timing Diagram  
a. LO operation by VCC under-voltage protection  
UVCChys  
UVCC+  
VCC  
UVCC-  
RCIN  
FO  
VRCIN,TH  
VRCIN,TH  
tUVCC,FO  
tFOd  
tUVCC,LO  
LO  
LIN  
www.aosmd.com  
Page 10 of 14  
Rev. 1.3 October 2018